MRF6S18100NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF6S18100NR1

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

IDSS

—

IGSS

—

—

10

μAdc

—

1

μAdc

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 330 μAdc)

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 3.3 Adc)

Dynamic Characteristics(1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

1.6

2

3

Vdc

VGS(Q)

1.5

2.8

3.5

Vdc

VDS(on)

—

0.24

—

Vdc

Crss

—

1.5

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1990 MHz

Power Gain

Gps

13

14.5

16

dB

Drain Efficiency

ηD

47

49

—

%

Input Return Loss

IRL

—

- 12

-9

dB

Pout @ 1 dB Compression Point

P1dB

100

110

—

W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg.,

1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

—

15

—

dB

Drain Efficiency

ηD

—

35

—

%

Error Vector Magnitude

EVM

—

2

—

% rms

Spectral Regrowth at 400 kHz Offset

SR1

—

- 63

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

- 76

—

dBc

Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805 - 1880 MHz

Power Gain

Gps

—

14.5

—

dB

Drain Efficiency

ηD

—

49

—

%

Input Return Loss

IRL

—

- 12

—

dB

Pout @ 1 dB Compression Point

1. Part internally matched both on input and output.

P1dB

—

110

—

W

MRF6S18100NR1 MRF6S18100NBR1

2

RF Device Data

Freescale Semiconductor

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