MRF6S18100NR1(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF6S18100NR1
(Rev.:2006)

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

260

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

500

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 330 μAdc)

VGS(th)

1.6

2

3

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.8

3.5

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 3.3 Adc)

VDS(on)

—

0.24

—

Forward Transconductance

(VDS = 10 Vdc, ID = 3.3 Adc)

gfs

—

5.3

—

Dynamic Characteristics(1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.5

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930- 1990 MHz

Power Gain

Gps

13

14.5

16

Drain Efficiency

ηD

47

49

—

Input Return Loss

IRL

—

- 12

-9

Pout @ 1 dB Compression Point

1. Part internally matched both on input and output.

P1dB

100

110

—

Unit

°C

Unit

μAdc

μAdc

nAdc

Vdc

Vdc

Vdc

S

pF

dB

%

dB

W

(continued)

MRF6S18100NR1 MRF6S18100NBR1

2

RF Device Data

Freescale Semiconductor

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