MRF6S19060N Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF6S19060N

1930-1990 MHz, 12 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor 

Zo = 10 Ω

Zload

f = 1990 MHz

f = 1930 MHz

f = 1990 MHz

f = 1930 MHz

Zsource

VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg.

f

MHz

Zsource

Ω

Zload

Ω

1930

4.54 - j7.95

4.15 - j5.58

1960

4.33 - j7.74

4.17 - j5.34

1990

4.20 - j7.43

4.22 - j5.10

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 15. Series Equivalent Source and Load Impedance

MRF6S19060NR1 MRF6S19060NBR1

8

RF Device Data

Freescale Semiconductor

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