MRF6S19060N Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF6S19060N

1930-1990 MHz, 12 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

109

108

107

106

90 100 110 120 130 140 150 160 170 180 190 200 210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

Figure 12. MTTF Factor versus Junction Temperature

N - CDMA TEST SIGNAL

100

0

1.2288 MHz

− 10

Channel BW

10

− 20

−IM3 in

+IM3 in

1

− 30

1.2288 MHz

1.2288 MHz

Integrated BW

Integrated BW

− 40

0.1

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

− 50

Through 13) 1.2288 MHz Channel Bandwidth

0.01 Carriers. ACPR Measured in 30 kHz Bandwidth @

− 60

±885 kHz Offset. IM3 Measured in 1.2288 MHz

0.001

0.0001

Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

− 70

−ACPR in 30 kHz +ACPR in 30 kHz

Integrated BW

Integrated BW

− 80

0

2

4

6

8

10

− 90

PEAK−TO−AVERAGE (dB)

− 100

Figure 13. 2 - Carrier CCDF N - CDMA

−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5

f, FREQUENCY (MHz)

Figure 14. 2 - Carrier N - CDMA Spectrum

RF Device Data

Freescale Semiconductor

MRF6S19060NR1 MRF6S19060NBR1

7

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