MRF3106 Просмотр технического описания (PDF) - Tyco Electronics
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MRF3106 Datasheet PDF : 4 Pages
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Linear
Power Transistors
• Designed for Class A, Common Emitter Linear Power Amplifiers.
• Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104 MRF3105 MRF3106
Output Power
Power Gain
0.5 W
10.5 dB
0.8 W
9 dB
1.6 W
8 dB
• Low Parasitic Microwave Stripline Package
• Gold Metalization for Improved Reliability
• Diffused Ballast Resistors
Order this document
by MRF3104/D
MRF3104
MRF3105
MRF3106
8.0–12 dB GAIN
1.55–1.65 GHz
MICROWAVE LINEAR
POWER TRANSISTORS
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
22
Vdc
Collector–Emitter Voltage
VCES
50
Vdc
Emitter–Base Voltage
Collector Current
MRF3104, MRF3105
MRF3106
VEBO
IC
3.5
Vdc
0.4
Adc
0.8
Operating Junction Temperature
Storage Temperature
Tj
200
°C
Tstg
–65 to +125
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case, DC
MRF3104
MRF3105
MRF3106
CASE 305A–01, STYLE 1
(.204″ PILL)
Symbol
RθJC (DC)
Max
40
35
22
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.25 mA, IC = 0)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 V, IC = 100 mA)
Symbol
Min
Typ
Max
Unit
BVCEO
22
BVCES
50
BVCBO
45
BVEBO
3.5
MRF3104, MRF3105
ICBO
—
MRF3106
—
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
0.25
mAdc
—
0.5
hFE
20
35
120
—
(continued)
REV 6
1
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