MRF281SR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF281SR1

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 20 μAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 25 mAdc)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 0.1 A)

Dynamic Characteristics

Input Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Functional Tests (In Freescale Test Fixture)

Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

VGS(th)

2.4

3.2

4

Vdc

VGS(q)

3

4.1

5

Vdc

VDS(on)

0.18

0.24

0.30

Vdc

Ciss

—

5.5

—

pF

Coss

—

3.3

—

pF

Crss

—

0.17

—

pF

Gps

11

12.5

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

η

30

33

—

%

Input Return Loss

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IRL

—

- 16

- 10

dB

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IMD

—

- 31

- 29

dBc

Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Gps

11

12.5

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

η

30

—

—

%

Input Return Loss

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IRL

—

- 16

- 10

dB

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IMD

—

- 31

—

dBc

Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,

f1 = 2000.0 MHz)

Gps

10.5

12

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,

f1 = 2000.0 MHz)

η

40

44

—

%

MRF281SR1 MRF281ZR1

2

RF Device Data

Freescale Semiconductor

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