MRF158 Просмотр технического описания (PDF) - Motorola => Freescale

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производитель

MRF158

Power Field Effect Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA)

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)

Gate–Source Leakage Current (VGS = 40 V, VDS = 0)

V(BR)DSS

IDSS

IGSS

ON CHARACTERISTICS

Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)

Forward Transconductance (VDS = 10 V, ID = 100 mA)

DYNAMIC CHARACTERISTICS

VGS(th)

gfs

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

Coss

Crss

FUNCTIONAL CHARACTERISTICS (Figure 1)

Common Source Power Gain

Gps

(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)

Drain Efficiency (Figure 1)

η

(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)

Electrical Ruggedness (Figure 1)

ψ

(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA,

VSWR 30:1 at all Phase Angles)

Series Equivalent Input Impedance

Zin

(VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)

Series Equivalent Output Impedance

(VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)

Zout

Min

Typ

Max

Unit

65

—

—

Vdc

—

—

0.5

mAdc

—

—

1.0

µAdc

1.0

4.0

6.0

Vdc

50

85

—

mmhos

—

3.0

—

pF

—

4.2

—

pF

—

0.45

—

pF

16

20

—

dB

45

55

—

%

No Degradation in Output Power

—

8.8 – j27.37

—

Ohms

—

16.96 – j62

—

Ohms

MRF158

2

MOTOROLA RF DEVICE DATA

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