MPS8099G(2007) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MPS8099G Datasheet PDF : 7 Pages
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NPN − MPS8099; PNP − MPS8599
NPN
PNP
2.0
2.0
TJ = 25°C
1.6
IC =
20 mA
IC =
50 mA
IC =
100 mA
IC =
200 mA
1.6
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC =
IC =
100 mA 200 mA
1.2
1.2
0.8
0.8
0.4
IC =
10 mA
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
0.4
TJ = 25°C
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
−1.0
−1.0
−1.4
−1.4
−1.8
RqVB FOR VBE
−2.2
−55°C TO 125°C
−1.8
RqVB FOR VBE
−55°C TO 125°C
−2.2
−2.6
−2.6
−3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. Base−Emitter Temperature Coefficient
−3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 18. Base−Emitter Temperature Coefficient
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