MPS8099G(2007) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MPS8099G
(Rev.:2007)

Amplifier Transistors

ON Semiconductor 

NPN − MPS8099; PNP − MPS8599

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 10 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

Base−Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICES

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

fT

Cobo

Cibo

Min

Max

Unit

Vdc

80

−

Vdc

80

−

Vdc

5.0

−

mAdc

−

0.1

mAdc

−

0.1

mAdc

−

0.1

−

100

300

100

−

75

−

Vdc

−

0.4

−

0.3

Vdc

0.6

0.8

MHz

150

−

pF

−

8.0

pF

−

30

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