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MOC8101W(2001) Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание
производитель
MOC8101W Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
ELECTRICAL CHARACTERISTICS (TA =25°C Unless otherwise specified)(1)
INPUT LED
Characteristic
Symbol
Min
Forward Voltage (IF = 60 mA)
Reverse Leakage Current (VR = 5.0 V)
Capacitance
VF
1.0
IR
C
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
(VCE = 10 V, TA = 25°C)
ICEO1
(VCE = 10 V, TA = 100°C)
ICEO2
Collector-Emitter Breakdown Voltage
MOC8101/2/3/4/5
(IC = 1.0 mA) V(BR) CEO
30
MOC8106/7/8, CNY17F-1/2/3/4
(IC = 1.0 mA)
70
Emitter-Collector Breakdown Voltage
(IE = 100 µA) V(BR) ECO
7.0
Collector-Emitter Capacitance
(f = 1.0 MHz, VCE = 0)
CCE
COUPLED
MOC8101
50
Output Collector Current
(IF = 10 mA, VCE = 10 V)
MOC8102
73
MOC8103
108
MOC8104
160
MOC8105
65
MOC8106 (CTR)(2)
50
MOC8107
100
MOC8108
250
CNY17F-1
40
(IF = 10 mA, VCE = 5 V)
CNY17F-2
63
CNY17F-3
100
CNY17F-4
160
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4
MOC8101/2/3/4/5/6/7/8
Isolation Voltage
Isolation Resistance
Isolation Capacitance
(IC = 2.5 mA, IF = 10 mA)
(IC = 500 µA, IF = 5.0 mA)
(f = 60 Hz, t = 1.0 min.)(4)
(VI-O = 500 V)(4)
(VI-O = 0, f = 1.0 MHz)(4)
VCE(sat)
VISO
RISO
CISO
5300
1011
** All typicals at TA = 25°C
Typ**
1.4
0.001
18
1.0
1.0
100
100
10
8
0.5
Max
Unit
1.65
V
10
µA
pF
50
nA
µA
V
V
pF
80
117
173
256
133
150
%
300
600
80
125
200
320
0.4
V
Vac(rms)
1
pF
www.fairchildsemi.com
2 OF 10
9/18/01 DS300266

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