MOC8101 Просмотр технического описания (PDF) - Vishay Semiconductors
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MOC8101 Datasheet PDF : 7 Pages
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MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Derate linearly from 25°C
t 10 μs
VR
IF
IFSM
Pdiss
6.0
V
60
mA
2.5
A
100
mW
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
Derate linearly from 25°C
BVCEO
BVECO
IC
30
V
7.0
V
50
mA
2.0
mW/°C
Power dissipation
COUPLER
Pdiss
150
mW
Isolation test voltage
Creepage distance
VISO
5300
7.0
8.0 (2)
VRMS
mm
mm
Clearance distance
7.0
mm
8.0 (2)
mm
Isolation thickness between
emitter and detector
0.4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Derate linearly from 25 °C
VIO = 500 V
CTI
175
RIO
1012
3.33
mW/°C
Total power dissipation
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (1)
Ptot
250
mW
Tstg
- 55 to + 150
°C
Tamb
- 55 to + 100
°C
Tj
100
°C
max. 10 s, dip soldering:
distance to seating plane 1.5 mm
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2) Applies to wide bending option 6.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
IF = 10 mA
IR = 10 μA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
VF
1.25
1.5
V
VBR
6.0
V
IR
0.01
10
μA
CO
25
pF
Rthja
750
K/W
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Collector emitter dark current
VCE = 10 V, Tamp = 25 °C MOC8101
VCE = 10 V, Tamp = 100 °C MOC8102
ICEO1
ICEO1
1.0
50
nA
1.0
μA
Collector emitter breakdown voltage
IC = 1.0 mA
BVCEO
30
V
Emitter collector breakdown voltage
IE = 100 A
BVECO
7.0
V
Thermal resistance
Rthja
500
K/W
COUPLER
Saturation voltage collector emitter
Coupling capacitance
IF = 5.0 mA
VCEsat
CC
0.25
0.4
V
0.6
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.6, 13-Sep-11
2
Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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