MMSZ5246ET1G(2012) Просмотр технического описания (PDF) - ON Semiconductor
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MMSZ5246ET1G Datasheet PDF : 7 Pages
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MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1
0.00001
1
10
100
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
+150C
+ 25C
− 55C
10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
100
100
TA = 25C
TA = 25C
10
10
1
1
0.1
0.1
0.01
0.01
0
2
4
6
8
10
12
10
30
50
70
90
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 20 ms Pulse Waveform
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