MMBTA56-AE3-R Просмотр технического описания (PDF) - Unisonic Technologies
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производитель
MMBTA56-AE3-R Datasheet PDF : 5 Pages
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MMBTA56
TYPICAL CHARACTERISTICS
Current -Gain Bandwidth Product
200
100
VCE=-2.0V
TJ=25℃
70
50
30
20
-2.0-3.0 -5.0 -7.0-10 -20-30 -50-70-100 -200
Collector Current, IC (mA)
1.0K
700
500
300
200
Switching Time
ts
100
tf
70
50
VCC=-40V
30 IC/IB=10
20 IB1=IB2
tr
10 TJ=25℃ td@VBE(off)=-0.5V
-5.0-7.0 -10 -20 -30-50-70-100-200-300-500
Collector Current, IC (mA)
DC Current Gain
400
TJ=125℃
VCE=-1.0V
200 25℃
-55℃
100
80
60
40
-0.5 -1.0-2.0 -5.0-10 -20 -50 -100-200-500
Collector Current, IC (mA)
PNP SILICON TRANSISTOR
Capacitance
100
70
TJ=25℃
50
Cibo
30
20
Cobo
10
7.0
5.0
-0.1-0.2 -0.5-10 -20 -5.0-10 -20 -50 -100
Reverse Voltage, VR (V)
Active-Region Safe Operating Area
-1.0K
-700
1.0ms
-500
-300
-200
TC=25℃
1.0s
-100 TA=25℃
-70
-50
MMBTA 55
-30
MMBTA56
-20
-10
Current Limit
Thermal Limit
Second Breakdown Limit
-1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100
Collector-Emitter Voltage, VCE (V)
“ON” Voltages
-1.0
TJ=125℃
-0.8 VBE(SAT )@IC/IB=10
-0.6
VBE(ON)@VCE=-1.0V
-0.4
-0.2
VCE(SAT)@IC/IB=10
0
-0.5 -1.0-2.0 -5.0 -10 -20 -50 -100-200-500
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-090,A
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