DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GBJ2501 Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге
Компоненты Описание
производитель
GBJ2501
Diodes
Diodes Incorporated. Diodes
GBJ2501 Datasheet PDF : 4 Pages
1 2 3 4
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 2500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Mechanical Data
Case: GBJ
Case Material: Molded Plastic. UL Flammability Classification
94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Plated Leads, Solderable per MIL-STD-202, Method
208
Lead Free Plating (Tin Finish).
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (Approximate)
Maximum Ratings (@TA = 25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
GBJ
25005
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Forward Rectified Output Current
(Note 3)
@ TC = 100°C
IO
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single Half Sine-Wave Superimposed on rated Load
IFSM
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
25
A
350
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 5)
Symbol
RJC
TJ, TSTG
Value
1.0
-65 to +150
Unit
°C/W
°C
Electrical Characteristics (@TA = 25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Forward Voltage (per element)
@ IF = 12.5A
VFM
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
I2t Rating for Fusing (t < 8.3ms)
@ TC = 25°C
@ TC = 125°C
IR
(Note 3)
I2t
10
500
µA
510
A2s
Typical Total Capacitance (per element)
(Note 4)
CT
85
pF
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Non-repetitive, for t > 1ms and < 8.3 ms.
4. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
5. Thermal resistance from junction to case per element. Unit mounted on 250 x 250 x 20mm aluminum plate heat sink.
GBJ25005 - GBJ2510
Document number: DS21221 Rev. 9 - 2
1 of 4
www.diodes.com
January 2018
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]