DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GBJ25005(2009) Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге
Компоненты Описание
производитель
GBJ25005
(Rev.:2009)
Diodes
Diodes Incorporated. Diodes
GBJ25005 Datasheet PDF : 4 Pages
1 2 3 4
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 2500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish/RoHS Compliant (Note 4)
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Please click here to visit our online spice models database.
Mechanical Data
Case: GBJ
Case Material: Molded Plastic. UL Flammability Classification
94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Plated Leads, Solderable per MIL-STD-202, Method
208
Lead Free Plating (Tin Finish).
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
GBJ
25005
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
50
100 200 400 600 800 1000 V
VR
RMS Reverse Voltage
VR(RMS)
35
70 140 280 420 560 700
V
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
IO
25
A
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single Half Sine-Wave Superimposed on rated Load
IFSM
350
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 3)
Symbol
RθJC
TJ, TSTG
Value
0.6
-65 to +150
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Forward Voltage (per element)
@ IF = 12.5A
VFM
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
I2t Rating for Fusing (t < 8.3ms)
@ TC = 25°C
@ TC = 125°C
IR
(Note 1)
I2t
10
500
µA
510
A2s
Typical Total Capacitance (per element)
(Note 2)
CT
85
pF
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.
GBJ25005 - GBJ2510
Document number: DS21221 Rev. 8 - 2
1 of 4
www.diodes.com
October 2009
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]