MMBT2369ALT1G Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MMBT2369ALT1G

Switching Transistors NPN Silicon

ON Semiconductor 

MMBT2369LT1G, MMBT2369ALT1G

200

TJ = 125°C

VCE = 1 V

100

75°C

25°C

-15°C

TJ = 25°C and 75°C

50

-55°C

20

1

2

5

10

20

IC, COLLECTOR CURRENT (mA)

50

100

Figure 11. Minimum Current Gain Characteristics

1.4

βF = 10

1.2 TJ = 25°C

1.0

MAX VBE(sat)

0.8

MIN VBE(sat)

0.6

0.4

MAX VCE(sat)

0.2

1

2

5

10

20

50

100

IC, COLLECTOR CURRENT (mA)

Figure 12. Saturation Voltage Limits

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5

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