MMBT2369ALT1G Просмотр технического описания (PDF) - ON Semiconductor
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MMBT2369ALT1G Datasheet PDF : 6 Pages
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MMBT2369LT1G, MMBT2369ALT1G
6
5
TJ = 25°C
LIMIT
TYPICAL
4
Cib
3
Cob
2
1
0.1
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
10
Figure 6. Junction Capacitance Variations
100
50
20
10
5
2
1
tr (VCC = 3 V)
βF = 10
VCC = 10 V
VOB = 2 V
tf
tr VCC = 10 V
ts
td
2
5
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 7. Typical Switching Times
C
COPT
C < COPT
C=0
TIME
Figure 8. Turn−Off Waveform
+6 V
t1
0
-4 V
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
980
10 V
500
Cs* < 3 pF
Figure 9. Storage Time Equivalent Test Circuit
1.0
0.8
0.6
0.4
0.2
0.02
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
TJ = 25°C
0.05
0.1
0.2
0.5
1
2
IB, BASE CURRENT (mA)
5
10
20
Figure 10. Maximum Collector Saturation Voltage Characteristics
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4
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