MMDJ-65609EV-40 Просмотр технического описания (PDF) - Atmel Corporation

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Компоненты Описание

производитель

MMDJ-65609EV-40

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Atmel Corporation 

DC Parameters

DC Test Conditions

Parameter

IIX (1)

IOZ (1)

VOL (2)

VOH (3)

Description

Input leakage

current

Output leakage

current

Output low voltage

Output high voltage

Minimum

-1

-1

-

2.4

Typical

–

–

–

–

1.

Gnd < Vin < VCC, Gnd < Vout < VCC Output Disabled.

2.

VCC min. IOL = 1 mA.

3.

VCC min. IOH = -0.5 mA.

Consumption

Symbol

ICCSB (1)

ICCSB1 (2)

ICCOP (3)

Description

Standby supply current

Standby supply current

Dynamic operating

current

65609E-40

2.5

1.5

50

1.

CS1 > VIH or CS2 < VIL and CS1 < VIL.

2.

CS1 > VCC - 0.3V or, CS2 < Gnd + 0.3V and CS1 < 0.2V

3.

F = 1/TAVAV, IOUT = 0 mA, W = OE = VIH, Vin = Gnd or VCC, VCC max.

M65609E

Maximum

Unit

1

µA

1

µA

0.4

V

–

V

Unit

mA

mA

mA

Value

max

max

max

5

4158D–AERO–06/02

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