5962-0250101QXC(2007) Просмотр технического описания (PDF) - Atmel Corporation

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Компоненты Описание

производитель

5962-0250101QXC
(Rev.:2007)

Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Atmel Corporation 

M65609E

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage to GND Potential............................ -0.5V + 5V

DC Input Voltage............................ GND - 0.3V to VCC + 0.3V

DC Output Voltage High Z State .... GND - 0.3V to VCC + 0.3V

Storage Temperature .................................... -65°C to + 150°C

Output Current Into Outputs (Low) ............................... 20 mA

Electro Statics Discharge Voltage................................. > 500V

(MIL STD 883D Method 3015.3)

Military Operating Range

Operating Voltage

3.3V + 0.3V

Recommended DC Operating Conditions

Parameter

Description

Min

VCC

Supply voltage

3

Gnd

Ground

0.0

VIL

Input low voltage

GND - 0.3

VIH

Input high voltage

2.2

Capacitance

Parameter

Description

Min

CIN(1)

Input low voltage

–

COUT(1)

Output high voltage

–

Note: 1. Guaranteed but not tested.

*NOTE:

Stresses greater than those listed under Absolute Max-

imum Ratings may cause permanent damage to the

device. This is a stress rating only and functional oper-

ation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

Operating Temperature

-55°C to + 125°C

Typ

Max

Unit

3.3

3.6

V

0.0

0.0

V

0.0

0.8

V

–

VCC + 0.3

V

Typ

Max

Unit

–

8

pF

–

8

pF

4

4158I–AERO–07/07

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