MJE344 Просмотр технического описания (PDF) - ON Semiconductor
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MJE344 Datasheet PDF : 3 Pages
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MJE344
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Symbol
Min
VCEO(sus)
200
ICEO
−
ICBO
−
IEBO
−
hFE
30
VCE(sat)
−
VBE(on)
−
fT
15
Cob
−
hfe
25
Max
Unit
−
Vdc
1.0
mAdc
0.1
mAdc
0.1
mAdc
300
−
1.0
Vdc
1.0
Vdc
−
MHz
15
pF
−
−
1.0
0.5
0.2 TJ = 150°C
500 ms
1.0 ms ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.02
THERMAL LIMIT TC = 25°C
0.01
10
20 30 40 60
100
200 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
300
200
TJ = +150°C
100
+100°C
70
+25 °C
50
30
−55 °C
20
VCE = 2.0 V
VCE = 10 V
10
1.0 2.0 3.0 5.0 7.0 10 20
50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
0.2
0
10
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = +25°C
20 30
50
100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
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