MJD210-I Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

MJD210-I

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE=-2V

VCE=-1V

10

1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

1000

100

10

1

-0.1

-1

-10

-100

VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Collector Output Capacitance

1000

100

VCC=-30V

IC=10IB

IB1=IB2

tS TG

tF

10

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 5. Turn Off Time

©2001 Fairchild Semiconductor Corporation

-10

-1

VBE(sat)

IC=10IB

-0.1

VCE(sat)

-0.01

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC=-30V

IC=10IB

1

tR

0.1

tD

0.01

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 4. Turn On Time

-100

-10

5ms

501m0µss100mσ

DC

-1

-0.1

-0.01

-0.1

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Safe Operating Area

Rev. A2, June 2001

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