MJD200 Просмотр технического описания (PDF) - Motorola => Freescale
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производитель
MJD200 Datasheet PDF : 6 Pages
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MJD200 MJD210
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
RθJC(t) = r(t) θJC
RθJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
1
2
5
10
20
t, TIME (ms)
Figure 8. Thermal Response
50
100
200
10
5 ms
5
3
2
TJ = 150°C
100 µs
1 ms
1
500 µs
dc
0.1
0.01
0.3
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
1
2 3 5 7 10
20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 8. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
Case 369–05 may be ordered by adding a “–1” suffix to the
device title (i.e. MJD200–1)
200
TJ = 25°C
Cib
100
70
50
Cob
30
MJD200 (NPN)
MJD210 (PNP)
20
0.4 0.6 1
2
4 6 10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Capacitance
4
Motorola Bipolar Power Transistor Device Data
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