MJ2194 Просмотр технического описания (PDF) - Motorola => Freescale

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производитель

MJ2194

Silicon Power Transistors

Motorola => Freescale 

MJ21193 MJ21194

PNP MJ21193

3.0

2.5

TJ = 25°C

2.0

IC/IB = 10

1.5

TYPICAL CHARACTERISTICS

1.4

1.2

TJ = 25°C

1.0

IC/IB = 10

0.8

0.6

NPN MJ21194

VBE(sat)

1.0

VBE(sat)

0.4

0.5

VCE(sat)

0

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

0.2

VCE(sat)

0

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

PNP MJ21193

10

TJ = 25°C

1.0 VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

10

TJ = 25°C

NPN MJ21194

VCE = 20 V (SOLID)

1.0

VCE = 5 V (DASHED)

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base–Emitter Voltage

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base–Emitter Voltage

100

10

TC = 25°C

1.0

1 SEC

0.1

1.0

10

100

1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to

greater dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power than can be

handled to values less than the limitations imposed by

second breakdown.

4

Motorola Bipolar Power Transistor Device Data

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