20N60B Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге

Компоненты Описание

производитель

20N60B

High Voltage IGBT with optional Diode

IXYS CORPORATION 

IXDP 20N60 B

IXDP 20N60 BD1

Symbol

Cies

C

oes

Cres

Qg

td(on)

tr

td(off)

tf

Eon

Eoff

RthJC

RthCH

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V = 25 V, V = 0 V, f = 1 MHz

CE

GE

800

pF

85

pF

50

pF

IC = 20 A, VGE = 15 V, VCE = 480 V

Inductive load, TJ = 125°C

IC = 20 A, VGE = ±15 V,

V

CE

=

300

V,

R

G

=

22

W

70

nC

25

ns

30

ns

260

ns

55

ns

0.9

mJ

0.4

mJ

Package with heatsink compound

0.5

0.9 K/W

K/W

Reverse Diode (FRED) [D1 version only]

Symbol

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IF = 20 A, VGE = 0 V

IF = 20 A, VGE = 0 V, TJ = 125°C

2.1 2.4 V

1.6

V

IF

TC = 25°C

TC = 90°C

25 A

15 A

IRM

trr

trr

RthJC

IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V

VGE = 0 V, TJ = 125°C

IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V

11

A

80

ns

40

ns

2.5 K/W

TO-220 AB Outline

Dim. Millimeter

Min. Max.

A 12.70 13.97

B 14.73 16.00

C 9.91 10.66

D 3.54 4.08

E 5.85 6.85

F 2.54 3.18

G 1.15 1.65

H 2.79 5.84

J 0.64 1.01

K 2.54 BSC

M 4.32 4.82

N 1.14 1.39

Q 0.35 0.56

R 2.29 2.79

Inches

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

0.100 BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

© 2000 IXYS All rights reserved

2-4

Share Link: