OM45L120PB Просмотр технического описания (PDF) - Omnirel Corp => IRF
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OM45L120PB Datasheet PDF : 4 Pages
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OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM50F60PB (TC = 25°C unless otherwise specified)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0 V
V(BR)CES
600
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.
ICES
-
VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C
-
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V
IGES
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE = VGE, IC = 250 µA
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 50 A
VGE(th)
2.5
VCE(sat)
-
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 10 V, IC = 50 A
gfs
25
VGE = 0,
Ciss
-
VCE = 25 V,
Coss
-
f = 1.0 mHz
Crss
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
-
VCC = 480 V, IC = 50 A,
tr
-
RGS = 2.7 , VGS = 15 V, L = 100 µH
td(off)
-
tf
-
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
VCE(clamp) = 480 V, IC = 50 A
td(on)
-
VGE = 15 V, Rg = 2.7
tf
-
L = 100 µH, Tj = 125°C
E(OFF)
-
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
IF = 60 A, Tj = 25°C
Vf
-
IF = 60 A, Tj = 150°C
-
VR = 600 V, Tj = 25°C
Ir
-
VR = 480 V, Tj = 125°C
-
IF = 1 A, di/dt = 200 A µ/S
trr
-
VR = 30 V, Tj = 25°C
Typ.
-
-
-
-
-
-
-
4000
340
100
50
200
200
300
300
600
9.6
-
-
-
-
-
Max.
-
0.25
1.0
±100
5.0
2.7
-
-
-
-
-
-
-
-
-
-
-
1.85
1.50
200
14
50
Unit
V
mA
mA
nA
V
V
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
m Ws
V
µA
mA
nS
ELECTRICAL CHARACTERISTICS: OM35L120PB (TC = 25°C unless otherwise specified)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0 V
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.
VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V
V(BR)CES
ICES
IGES
1200
-
-
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE = VGE, IC = 4 mA
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 35 A
VGE(th)
4.0
VCE(sat)
-
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 10 V, IC = 35 A
gfs
26
VGE = 0,
Ciss
-
VCE = 25 V,
Coss
-
f = 1.0 mHz
Crss
-
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
-
VCC = 960 V, IC = 35 A,
tr
-
RGS = 2.7 , VGS = 15 V,
td(off)
-
L = 100 µH
tf
-
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
VCE(clamp) = 960 V, IC = 35 A
td(on)
-
VGE = 15 V, Rg = 2.7
tf
-
L = 100 µH, Tj = 125°C
E(OFF)
-
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
IF = 52 A, Tj = 25°C
Vf
-
IF = 52 A, Tj = 150°C
-
VR = 1200 V, Tj = 25°C
Ir
-
VR = 960 V, Tj = 125°C
-
IF = 1 A, di/dt = 200 A µ/S
trr
-
VR = 30 V, Tj = 25°C
Typ.
-
-
-
-
-
-
-
3800
235
60
80
150
400
700
400
1100
54
-
-
-
-
-
3.1 - 61
Max.
-
3.0
1.2
±100
8.0
4.0
-
-
-
-
-
-
-
-
-
-
-
2.55
2.15
2.2
14
60
Unit
V
mA
mA
nA
V
V
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
m Ws
V
mA
mA
nS
3.1
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