RMTR10300 Просмотр технического описания (PDF) - Raytheon Company

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RMTR10300

10-30 GHz Tripler MMIC

Raytheon Company 

RMTR10300

10 – 30 GHz Tripler MMIC

Figure 4

Recommended

Assembly Diagram

Drain Supply (Vd = +5 V)

Die-Attach

80Au/20Sn

5mil Thick

Alumina

50-Ohm

100pF

ADVANCED INFORMATION

10,000pF

` 100pF

5 mil Thick

Alumina

50-Ohm

RF

Input

RF

Output

2 mil Gap

L< 0.015”

(4 Places)

Gate Supply (Vg)

Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.

Recommended

Procedure

for Biasing and

Operation

CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the ground

of the chip carrier. Slowly apply negative gate

bias supply voltage of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +5 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=75 mA.

Step 5: After the bias condition is established, the RF

input signal may now be applied at the

appropriate frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power.

(ii) Turn down and off drain voltage (Vd).

(iii) Turn down and off gate bias voltage (Vg).

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised April 6, 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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