HBT134I Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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HBT134I

TRIAC

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200101

Issued Date : 2001.07.01

Revised Date : 2002.03.27

Page No. : 1/4

HBT136AE

TRIAC

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for

use in general purpose bidirectional switching and phase control

applications, where high sensitivity is required in all four quadrants.

Quick Reference Data

Symbol

VDRM

IT(RMS)

ITSM

Parameter

Repetitive peak off-state voltages

RMS on-state current

Non-repetitive peak on-state current

Pin Configuration

Pin

Description

1

Main terminal 1

2

Main terminal 2

3

Gate

tab Main terminal 2

tab

123

Limtiing Values

Symbol

VDRM

IT(RMS)

ITSM

I2t

dIT/dt

IGM

VGM

PGM

PG(AV)

Tstg

Tj

Parameter

Repetitive peak off-state voltages

RMS on-state current

Non-repetitive peak on-state current

I2t for fusing

Repetitive rate of rise of on-state current after triggering

T2+ G+

T2+ G-

T2- G-

T2- G+

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage Temperature Range

Operating junction temperature

TO-220AB

Max.

Unit

600

V

4

A

25

A

Symbol

T2

T1

G

Min. Max. Units

-

600 V

-

4

A

-

25

A

-

3.1 A2S

-

50 A/us

-

50 A/us

-

50 A/us

-

10 A/us

-

2

A

-

5

V

-

5

W

-

0.5 W

-

150 °C

-

125 °C

HBT136AE

HSMC Product Specification

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