2N2484 Просмотр технического описания (PDF) - Philips Electronics
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2N2484 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
2N2484
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBE
Cc
Ce
fT
F
collector cut-off current
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tj = 150 °C
emitter cut-off current
IC = 0; VEB = 5 V
DC current gain
IC = 1 µA; VCE = 5 V
IC = 10 µA; VCE = 5 V
IC = 10 µA; VCE = 5 V; Tj = 55 °C
IC = 100 µA; VCE = 5 V
IC = 500 µA; VCE = 5 V
IC = 1 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; note 1
collector-emitter saturation voltage IC = 1 mA; IB = 0.1 mA
base-emitter voltage
IC = 0.1 mA; VCE = 5 V
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 50 µA; VCE = 5 V; f = 100 MHz
IC = 500 µA; VCE = 5 V; f = 100 MHz
noise figure
IC = 10 µA; VCE = 5 V; RS = 10 kΩ
f = 100 Hz; B = 20 Hz
f = 1 kHz; B = 200 Hz
f = 10 kHz; B = 2 kHz
Wide band; B = 15.7 kHz
MIN. TYP.
−
−
−
−
−
−
30 −
100 −
20 −
175 −
200 −
250 −
−
−
−
−
500 −
−
−
−
9
15 −
60 80
−
−
−
−
−
−
−
−
MAX. UNIT
10 nA
10 µA
10 nA
−
500
−
−
−
−
800
350 mV
700 mV
6
pF
−
pF
−
MHz
−
MHz
10 dB
3
dB
2
dB
3
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
1997 May 01
4
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