2N2484 Просмотр технического описания (PDF) - Philips Electronics

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производитель

2N2484

NPN general purpose transistor

Philips Electronics 

Philips Semiconductors

NPN general purpose transistor

Product specification

2N2484

FEATURES

• Low current (max. 50 mA)

• Low voltage (max. 60 V)

APPLICATIONS

• General purpose switching and amplification

• High performance (low-level), low-noise amplifier

applications both for direct current and frequencies

up to 100 MHz.

DESCRIPTION

NPN transistor in a TO-18; SOT18 metal package.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

base

collector, connected to the case

handbook, halfpa1ge

2

3

3

2

MAM264

1

Fig.1 Simplified outline (TO-18; SOT18)

and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

ICM

Ptot

hFE

collector-base voltage

collector-emitter voltage

peak collector current

total power dissipation

DC current gain

fT

transition frequency

CONDITIONS

MIN.

open emitter

−

open base

−

−

Tamb ≤ 25 °C

−

IC = 10 µA; VCE = 5 V

100

IC = 1 mA; VCE = 5 V

250

IC = 10 mA; VCE = 5 V

−

IC = 0.5 mA; VCE = 5 V; f = 100 MHz 60

TYP.

−

−

−

−

−

−

−

80

MAX.

60

60

100

360

500

−

800

−

UNIT

V

V

mA

mW

MHz

1997 May 01

2

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