RF1K49156 Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
RF1K49156 Datasheet PDF : 8 Pages
| |||
RF1K49156
Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TA = 25oC . . .
Derate Above
.....
25oC
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RF1K49156
30
30
±10
6.3
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJA
ID = 250µA, VGS = 0V, (Figure 13)
VGS = VDS, ID = 250µA, (Figure 12)
VDS = 30V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±10V
ID = 6.3A, VGS = 5V, (Figures 9, 11)
VDD = 15V, ID ≈ 6.3A,
RL = 2.38Ω, VGS = 5V,
RGS = 25Ω
(Figure 10)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V,
ID = 6.3A,
RL = 3.81Ω
(Figure 15)
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 14)
Pulse Width = 1s
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
VSD
trr
ISD = 6.3A
ISD = 6.3A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
30
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.030
Ω
-
-
165
ns
-
35
-
ns
-
100
-
ns
-
150
-
ns
-
95
-
ns
-
-
300
ns
-
52
65
nC
-
29
37
nC
-
1.8
2.3
nC
-
2030
-
pF
-
625
-
pF
-
105
-
pF
-
-
62.5
oC/W
MIN
TYP
MAX UNITS
-
-
1.05
V
-
-
58
ns
8-116
Share Link: 