MHVIC2114R2 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MHVIC2114R2

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Operating Junction Temperature

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

Tstg

TJ

Pin

Symbol

RθJC

Value

- 0.5, +65

- 0.5, +15

- 65 to +150

150

5

Value

Unit

Vdc

Vdc

°C

°C

dBm

Unit

°C/W

Driver Application

Stage 1, 27 Vdc, IDQ1 = 96 mA

11.5

(Pout = +0.2 W CW)

Stage 2, 27 Vdc, IDQ2 = 204 mA

7.52

Stage 3, 27 Vdc, IDQ3 = 111 mA

5.52

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

0 (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

240

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,

Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel

Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

29

32

36

dB

Gain Flatness

GF

—

0.3

0.5

dB

Input Return Loss

IRL

—

- 13

- 10

dB

Adjacent Channel Power Ratio

ACPR

—

- 60

- 57

dBc

Group Delay

Delay

—

1.7

—

ns

Phase Linearity

—

—

0.2

—

°

MHVIC2114R2

2

RF Device Data

Freescale Semiconductor

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