Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
PERFORMANCE TESTS (In Motorola Test Fixture, 50 οhm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 865–895 MHz
Rating
Symbol Min
Typ
Max
Unit
Quiescent Current Accuracy over Temperature (–10 to 85°C) at Nominal Value
∆Iqt
—
±5
—
%
Gain Flatness @ Pout = 23 dBm (800 MHz to 960 MHz)
Deviation from Linear Phase @ Pout = 23 dBm
Group Delay @ Pout = 23 dBm
Insertion Phase Window @ Pout = 23 dBm (part to part)
GF
—
0.20
—
dB
∅
—
±0.2
—
°
Delay
—
2.2
—
ns
∆∅
—
±10
—
°
GSM FUNCTIONAL TESTS (In Motorola GSM Test Fixture, 50 οhm system) VDS = 26 V, IDQ1 = 50 mA, IDQ2 = 140 mA, 921–960 MHz, CW
Rating
Symbol Min
Typ
Max
Unit
Output Power at 1dB Compression Point
P1dB
—
15
—
Watts
Common–Source Amplifier Power Gain @ P1dB
Gain
—
30
—
dB
Drain Efficiency @ P1dB
η
—
56
—
%
Input return Loss @ P1dB
IRL
—
–16
—
dB
EVM @ 5 W
—
—
0.9
—
%
Third Order Intermodulation Distortion (15 W PEP, 2 Tone 100 kHz spacing)
IMD3
—
–30
—
dBc
Drain Efficiency (15 W PEP, 2 Tone 100 kHz spacing)
η
—
35
—
%
MOTOROLA RF DEVICE DATA
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MHVIC915R2
3