MGFC5212 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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MGFC5212 Datasheet PDF : 4 Pages
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PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5212
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1205
460
GND
Vg1
950
RF in
GND
GND
Vg2 GND
RF out
GND
550
Vd1 R(Vd1) R(Vd2) GND Vd2
550
350
760
910
1210
1700
X Dimention 1.70 mm
Y Dimention 0.95 mm
MITSUBISHI
ELECTRIC
as of July '98
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