MCR218-2 Просмотр технического описания (PDF) - ON Semiconductor
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MCR218-2 Datasheet PDF : 4 Pages
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MCR218−2, MCR218−4, MCR218−6
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RqJC
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
Gate Non−Trigger Voltage
(Rated 12 V, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
Symbol
IDRM, IRRM
VTM
IGT
VGT
VGD
IH
dv/dt
Max
Unit
2.0
°C/W
260
°C
Min Typ Max Unit
−
−
10
mA
−
−
2.0
mA
−
1.5 1.8
V
−
10
25
mA
−
−
1.5
V
0.2
−
−
V
−
16
30
mA
−
100
−
V/ms
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
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