MCR100-8H Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

Номер в каталоге

Компоненты Описание

производитель

MCR100-8H

Sensitive Gate Silicon Controlled Rectifiers

Shenzhen Winsemi Microelectronics Co., Ltd 

MCR100-8H

Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)

Symbol

Characteristics

IDRM/IRRM

VTM

IGT

VGT

off-state leakage current

(VAK= VDRM/VRRM)

Forward “On” voltage (ITM = 1.2A tp = 380μs)

(Note2.1)

Gate trigger current (continuous dc)

(VAK = 7 Vdc, RL = 100 Ω)

Gate Trigger Voltage (Continuous dc)

(VAK = 7 Vdc, RL = 100 Ω)

Tc=25℃

Tc=125℃

Min Typ. Max Unit

-

-

1

μA

100

-

1.4 1.8

V

(Note2.2)

15

-

200 μA

(Note2.2)

-

-

0.8

V

VGD

Gate threshold Voltage

(Note2.1) 0.2

-

-

V

dv/dt

IH

Voltage Rate of Rise Off-State Voltage

(VD=0.67VDRM ;exponential waveform)

Holding Current (VD = 12 V; IGT = 0.5 mA)

TJ=125℃

500 800

Gate open circuit

25

-

2

-

V/μs

5

mA

IL

latching current (VD = 12 V; IGT = 0.5 mA)

-

2

6

mA

Note 2.1 Pulse width≤1.0ms,duty cycle≤1%

2.2 RGK current is not included in measurement.

2/5

Steady, keep you advance

Share Link: