MCP73833 Просмотр технического описания (PDF) - Microchip Technology
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MCP73833 Datasheet PDF : 32 Pages
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MCP73833/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to 85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Sym
Min
Typ
Max
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
IPREG / IREG
7.5
15
10
12.5
20
25
30
40
50
—
100
—
Precondition Voltage Threshold
Ratio
VPTH / VREG
64
69
66.5
70
71.5
75
Precondition Hysteresis
Charge Termination
VPHYS
—
100
—
Charge Termination Current Ratio
ITERM / IREG
3.75
5
6.25
5.6
7.5
9.4
7.5
10
12.5
15
20
25
Automatic Recharge
Recharge Voltage Threshold Ratio VRTH / VREG
—
94.0
—
—
96.5
—
Pass Transistor ON-Resistance
ON-Resistance
RDSON
—
300
—
Battery Discharge Current
Output Reverse Leakage Current
IDISCHARGE
—
0.15
2
—
0.25
2
—
0.15
2
—
-5.5
-15
Status Indicators - STAT1, STAT2, PG
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
ISINK
VOL
ILK
—
15
25
—
0.4
1
—
0.01
1
Charge Impedance Range
Standy Impedance
RPROG
RPROG
1
—
20
70
—
200
Thermistor Bias
Thermistor Current Source
Thermistor Comparator
Upper Trip Threshold
Upper Trip Point Hysteresis
Lower Trip Threshold
Lower Trip Point Hysteresis
System Test (LDO) Mode
Input High Voltage Level
THERM Input Sink Current
Bypass Capacitance
ITHERM
VT1
VT1HYS
VT2
VT2HYS
VIH
ISINK
CBAT
47
50
53
1.20
—
0.235
—
1.23
-50
0.25
50
1.26
—
0.265
—
(VDD-0.1)
—
—
3
6
20
1
—
—
4.7
—
—
% PROG = 1.0 kΩ to 10 kΩ
% TA=-5°C to +55°C
%
%
%
VBAT Low-to-High
%
mV VBAT High-to-Low
% PROG = 1.0 kΩ to 10 kΩ
% TA=-5°C to +55°C
%
%
%
VBAT High-to-Low
%
mΩ VDD = 3.75V
TJ = 105°C
µA PROG Floating
µA
VDD < VBAT
µA
VDD < VSTOP
µA Charge Complete
mA
V
ISINK = 4 mA
µA High Impedance, 6V on pin
kΩ
kΩ Minimum Impedance for
Standby
µA 2 kΩ < RTHERM < 50 kΩ
V
VTHERM Low-to-High
mV
V
VTHERM High-to-Low
mV
V
µA Stand-by or system test mode
µF IOUT < 250 mA
µF IOUT > 250 mA
DS22005B-page 4
© 2009 Microchip Technology Inc.
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