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MCP73831

Miniature Single-Cell, Fully Integrated Li-Ion,Li-Polymer Charge Management Controllers

Microchip Technology 

MCP73831/2

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 6V, TA = -40°C to +85°C.

Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)

Precondition Current

IPREG / IREG

7.5

Ratio

15

10

12.5

20

25

30

40

50

—

100

—

Precondition Voltage

Threshold Ratio

Precondition Hysteresis

Charge Termination

Charge Termination

Current Ratio

VPTH / VREG

VPHYS

ITERM / IREG

64

69

—

3.75

5.6

7.5

15

66.5

71.5

110

5

7.5

10

20

69

74

—

6.25

9.4

12.5

25

Automatic Recharge

Recharge Voltage

Threshold Ratio

VRTH / VREG

91.5

94

Pass Transistor ON-Resistance

ON-Resistance

RDSON

—

Battery Discharge Current

Output Reverse Leakage IDISCHARGE

—

Current

—

—

—

Status Indicator – STAT

Sink Current

ISINK

—

Low Output Voltage

VOL

—

Source Current

ISOURCE

—

High Output Voltage

VOH

—

Input Leakage Current

ILK

—

PROG Input

Charge Impedance

RPROG

2

Range

Minimum Shutdown

Impedance

RPROG

70

Automatic Power Down

Automatic Power Down

Entry Threshold

VPDENTER

VDD<(VBAT

+20mV)

Automatic Power Down

VPDEXIT

—

Exit Threshold

Thermal Shutdown

Die Temperature

Die Temperature

Hysteresis

TSD

—

TSDHYS

—

Note 1: Not production tested. Ensured by design.

94.0

96.5

350

0.15

0.25

0.15

-5.5

—

0.4

—

VDD-0.4

0.03

—

—

VDD<(VBAT

+50mV)

VDD<(VBAT

+150mV)

150

10

96.5

99

—

2

2

2

-15

25

1

35

VDD - 1

1

20

200

—

VDD<(VBAT

+200mV)

—

—

% PROG = 2.0 kΩ to 10 kΩ

% PROG = 2.0 kΩ to 10 kΩ

% PROG = 2.0 kΩ to 10 kΩ

% No Preconditioning

TA = -5°C to +55°C

% VBAT Low-to-High

% VBAT Low-to-High

mV VBAT High-to-Low

% PROG = 2.0 kΩ to 10 kΩ

% PROG = 2.0 kΩ to 10 kΩ

% PROG = 2.0 kΩ to 10 kΩ

% PROG = 2.0 kΩ to 10 kΩ

TA = -5°C to +55°C

% VBAT High-to-Low

% VBAT High-to-Low

mΩ VDD = 3.75V, TJ = 105°C

μA PROG Floating

μA VDD Floating

μA VDD < VSTOP

μA Charge Complete

mA

V ISINK = 4 mA

mA

V ISOURCE = 4 mA (MCP73831)

μA High-Impedance

kΩ

kΩ

3.5V ≤ VBAT ≤ VREG

VDD Falling

3.5V ≤ VBAT ≤ VREG

VDD Rising

°C

°C

DS21984B-page 4

© 2006 Microchip Technology Inc.

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