MCP73828-4.1VUATR Просмотр технического описания (PDF) - Microchip Technology

Номер в каталоге

Компоненты Описание

производитель

MCP73828-4.1VUATR

Single Cell Lithium-Ion Charge Management Controller with Charge Complete Indicator and Temperature Monitor

Microchip Technology 

MCP73828

1.0 ELECTRICAL

CHARACTERISTICS

1.1 Maximum Ratings*

VIN...................................................................... -0.3V to 6.0V

All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V

Current at CD10 Pin ................................................ +/-30 mA

Current at VDRV.......................................................... +/-1 mA

Maximum Junction Temperature, TJ.............................. 150°C

Storage temperature .....................................-65°C to +150°C

ESD protection on all pins ..................................................≥ 4 kV

*Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

PIN FUNCTION TABLE

Pin Name

Description

1

SHDN Logic Shutdown

2

GND Battery Management

0V Reference

3 THERM Cell Temperature Monitor

4

CD10 Charge Complete Output

5

VBAT Cell Voltage Monitor Input

6

VDRV Drive Output

7

VSNS Charge Current Sense Input

8

VIN

Battery Management

Input Supply

DC CHARACTERISTICS: MCP73828-4.1, MCP73828-4.2

Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mΩ, TA = -20°C to +85°C.

Typical values are at +25°C. Refer to Figure 1-1 for test circuit.

Parameter

Sym

Min

Typ

Max

Units

Conditions

Supply Voltage

VIN

Supply Current

IIN

Voltage Regulation (Constant Voltage Mode)

Regulated Output Voltage

VREG

Line Regulation

∆VBAT

Load Regulation

Output Reverse Leakage Current

External MOSFET Gate Drive

Gate Drive Current

∆VBAT

ILK

IDRV

Gate Drive Minimum Voltage

VDRV

Current Regulation (Controlled Current Mode)

Current Sense Gain

ACS

Current Limit Threshold

VCS

Foldback Current Scale Factor

K

Charge Complete Indicator - CD10

Current Threshold

ITH

Low Output Voltage

VOL

Leakage Current

ILK

Shutdown Input - SHDN

Input High Voltage Level

VIH

Input Low Voltage Level

VIL

Input Leakage Current

ILK

4.5

—

—

4.059

4.158

-10

-1

—

—

0.08

—

—

40

—

—

—

—

40

—

—

—

0.7

265

4.1

4.2

—

+0.2

10

—

—

1.6

100

53

0.43

10

—

—

—

—

—

5.5

V

15

µA

Shutdown, VSHDN = 0V

560

Constant Voltage Mode

4.141

4.242

10

+1

—

1

—

—

V

MCP73828-4.1 only

V

MCP73828-4.2 only

mV

VIN = 4.5V to 5.5V,

IOUT = 75 mA

mV

IOUT=10 mA to 75 mA

µA

VIN=Floating, VBAT=VREG

mA

Sink, CV Mode

mA

Source, CV Mode

V

—

dB

∆(VSNS-VDRV) / ∆VBAT

75

mV

(VIN-VSNS) at IOUT

—

A/A

—

%IOUT(PEAK)

400

mV

ISINK = 10 mA

1

µA

ISINK=0 mA, VCD10=5.5V

—

%VIN

25

%VIN

1

µA

VSHDN = 0V to 5.5V

 2002 Microchip Technology Inc.

DS21706A-page 3

Share Link: