MCH5834 Просмотр технического описания (PDF) - SANYO -> Panasonic
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MCH5834 Datasheet PDF : 6 Pages
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MCH5834
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=350mA
ID=350mA, VGS=4V
ID=200mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=700mA
VDS=10V, VGS=4V, ID=700mA
VDS=10V, VGS=4V, ID=700mA
IS=700mA, VGS=0V
IR=0.5mA
IF=0.3A
IF=0.5A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
30
V
1 µA
1 µA
0.4
1.3
V
0.45
0.8
S
0.7
0.9
Ω
0.8
1.15
Ω
1.6
2.4
Ω
30
pF
7
pF
3.5
pF
8
ns
6
ns
10
ns
8
ns
1
nC
0.4
nC
0.2
nC
0.93
1.2
V
15
V
0.37
0.42
V
0.42
0.47
V
120 µA
13
pF
10 ns
Package Dimensions
unit : mm (typ)
7021A-008
2.0
5
4
0.15
0 to 0.02
1 23
0.65
0.3
Electrical Connection
5
4
1
2
3
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
123
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
No. A0558-2/6
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