MC9S08QA2(2008) Просмотр технического описания (PDF) - Freescale Semiconductor
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MC9S08QA2 Datasheet PDF : 32 Pages
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Electrical Characteristics
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 4. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Series resistance
R1
Human
Body
Storage capacitance
C
Number of pulses per pin
1500
Ω
100
pF
3
Series resistance
R1
0
Ω
Machine Storage capacitance
C
200
pF
Number of pulses per pin
3
Minimum input voltage limit
Latch-up
Maximum input voltage limit
–2.5
V
7.5
V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating1
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Machine model (MM)
VMM
±200
—
V
3
Charge device model (CDM)
VCDM
±500
—
V
4
Latch-up current at TA = 85°C
ILAT
±100
—
mA
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
3.5 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 6. DC Characteristics (Temperature Range = –40 to 85°C Ambient)
Parameter
Supply voltage (run, wait, and stop modes)
Symbol
(VDD falling)
VDD
(VDD rising)
Minimum RAM retention supply voltage applied to VDD
Low-voltage detection threshold
(VDD falling)
(VDD rising)
Low-voltage warning threshold
(VDD falling)
VRAM
VLVD
VLVW
Min
1.8
VLVDL
(rising)
Vpor1,2
1.80
1.88
2.08
Typical
—
—
—
1.82
1.90
2.1
Max
Unit
3.6
V
3.6
—
V
1.91
V
1.99
2.2
V
MC9S08QA4 Series, Rev. 2
Freescale Semiconductor
7
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