ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C ≤ TA ≤ 85°C unless otherwise noted. Input voltages VIN1 = VIN2 = 3.3V using
the typical application circuit (see Figure 33), unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
BUCK CONVERTER (CONTINUED)
High Side Power MOSFET Q1 RDS(ON)(9), (10)
ID = 500mA, TA = 25°C, VBST = 8.0V
Low Side Power MOSFET Q2 RDS(ON)(9), (10)
ID = 500mA, TA = 25°C, VBST = 8.0V
RDS(ON)Q1
mΩ
–
60
–
RDS(ON)Q2
mΩ
–
65
–
Buck Converter Peak Current Limit (High Level)
VOUT Pull-down MOSFET Q3 Current Limit
TA = 25°C, VBST = 8.0V
VOUT Pull-down MOSFET Q3 RDS(ON)(10)
ID = 1.0A, VBST = 8.0V
ILIMH
ILIMPQ3
-4.0
-2.7
-1.5
A
0.75
–
A
2.0
RDS(ON)PQ3
–
Ω
–
1.9
Thermal Shutdown (VOUT Pull-down MOSFET Q3)(9)
Thermal Shutdown Hysteresis (9)
Notes
9. Design information only. This parameter is not production tested.
10. ID is the MOSFET drain current.
TSD
THYS
150
170
190
°C
–
10
–
°C
34701
8
Analog Integrated Circuit Device Data
Freescale Semiconductor