Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VPWR ≤ 16 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic Voltage Thresholds (Note 11)
SCLK, SI, Tri-State SO Input Current
0 V to VDD
VINLOGIC
0.8
–
2.2
V
ISCLK, ISI,
µA
ISO (TRI)
-10
–
10
CS Input Current
CS = VDD
ICS
µA
-10
–
10
CS Pullup Current
CS = 0 V
ICS
µA
30
–
100
SO High-State Output Voltage
ISO(HIGH) = -200 µA
VSO (HIGH)
VDD - 0.8
–
V
VDD
SO Low-State Output Voltage
ISO(HIGH) = 1.6 mA
VSO (LOW)
–
V
–
0.4
Input Capacitance on SCLK, SI, Tri-State SO (Note 12)
INT Internal Pullup Current
CIN
–
–
20
pF
–
15
40
100
µA
INT Voltage
INT = Open Circuit
INT Voltage
IINT = 1.0 mA
WAKE Internal Pullup Current
WAKE Voltage
WAKE = Open Circuit
V INT (HIGH)
VDD - 0.5
–
V INT (LOW)
–
0.2
IWAKE (PU)
20
40
V WAKE (HIGH)
4.0
4.3
V
VDD
V
0.4
100
µA
V
5.3
WAKE Voltage
IWAKE = 1.0 mA
V WAKE(LOW)
–
V
0.2
0.4
WAKE Voltage
Maximum Voltage Applied to WAKE Through External Pullup
V WAKE(MAX)
–
V
–
40
Notes
11. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
12. This parameter is guaranteed by design but is not production tested.
33972
6
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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