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MC33290D Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание
производитель
MC33290D
Freescale
Freescale Semiconductor Freescale
MC33290D Datasheet PDF : 12 Pages
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions of 4.75 V VDD 5.25 V, 8.0 V VBB 18 V, -40°C TC 125°C, unless otherwise
noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Fall Time (19)
RISO = 510 Ω to VBB, CISO = 10 nF to Ground
tfall(ISO)
µs
2.0
ISO Propagation Delay (20)
High to Low: RISO = 510 Ω, CISO = 500 pF (21)
Low to High: RISO = 510 Ω, CISO = 500 pF (22)
tPD(ISO)
µs
2.0
2.0
Notes
19. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.
20. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.
21. Step TX voltage from 0.2 VDD to 0.8 VDD. Time measured from VIH(ISO) until VISO reaches 0.3 VBB.
22. Step TX voltage from 0.8 VDD to 0.2 VDD. Time measured from VIL(ISO) until VISO reaches 0.7 VBB.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33290
7

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