NCV33275(2015) Просмотр технического описания (PDF) - ON Semiconductor
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NCV33275 Datasheet PDF : 14 Pages
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GND
4
123
Vin GND Vout
MC33275ST
MC33275, NCV33275
GND
4
12 3
VinGND Vout
MC33275DT
PIN CONNECTIONS
1
Input
GND 2
3
GND
N/C 4
8
Output
7 GND
6
GND
5 N/C
Pins 4 and 5 Not Connected
MC33275D
Input 1
ÇÇ Input 2
ÇÇ Input 3
ÇÇ N/C 4
8 Output
Ç7 N/C
Ç6 GND
Ç5 N/C
MC33275MN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Power Dissipation and Thermal Characteristics
TA = 25°C
Maximum Power Dissipation
Case 751 (SOIC−8) D Suffix
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 318E (SOT−223) ST Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 369A (DPAK−3) DT Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 488AF (DFN−8, 4x4) MN Suffix
Thermal Resistance, Junction−to−Air (with 1.0 oz PCB cu area)
Thermal Resistance, Junction−to−Air (with 1.8 oz PCB cu area)
Thermal Resistance, Junction−to−Case
VCC
PD
RqJA
RqJC
RqJA
RqJC
RqJA
RqJC
RqJA
RqJA
psi−JC*
13
Vdc
Internally Limited
160
25
245
15
92
6.0
183
93
9.0
W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Output Current
Maximum Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
IO
TJ
TA
Tstg
ESD
300
mA
150
°C
− 40 to +125
°C
− 65 to +150
°C
V
4000
400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to
which it is attached.
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