MC33170DTB Просмотр технического описания (PDF) - ON Semiconductor

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MC33170DTB

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

ON Semiconductor 

MC33170

ELECTRICAL CHARACTERISTICS

Characteristic

Pin # Symbol

Min

Typ

Max

Unit

INPUT SPECIFICATIONS

(For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 125°C unless otherwise noted)

Input voltage range

7

Vbat

2.7

3.6

5.5

V

Quiescent Current (ON mode)

1 band operating, no load, Vneg. Reg.= –4.2V, VCE = 900mV

IQON

1.0

3.0

mA

Standby current (OFF mode)

CE pin at low level, Vbat = 5.5V, VNEG and Vboost open

IQOFF

1.0

10

µA

LOGIC CONTROL SPECIFICATIONS

Logic Levels (For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 125°C unless otherwise noted)

Logic Level zero

Band Selection, Common Enable, TxEn

1–2

OFF

14

300

mV

Logic Level one

Band Selection, Common Enable, TxEn

1–2

ON

900

mV

14

Timings (TA = 25°C)

Transmission Enable, device already ON

10% of TxEn to 90% of Vbat on PA start–up pin

4.0

µs

VOLTAGE REGULATOR SPECIFICATIONS

Option section (For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 125°C unless otherwise noted)

Output voltage

8

VregOUT

2.45

2.5

2.55

V

Output current

8

IregOUT

10

mA

Short circuit current (Vout = Vnominal – 300mV)

8

IregSHORT

20

mA

Line regulation

7–8

Vin = Vout + 1V to 5.5V, device is ON 10mA load on pin 8, 100nF

400

µV

Dropout voltage at Iout = 10mA

Output capacitor

8 VregDROP

8

CregOUT

150

mV

100

nF

Dynamic parameters (TA = 25°C)

Ripple rejection

F = 1kHz, Vin = Vout + 1V, Iout = 1mA, Cout = 100nF

8

PSRR

–70

dB

RMS Noise voltage

8

Iout = 1mA, Cout = 100nF, <20Hz — 200kHz>

100

µV

Noise density @ 1kHz

Iout = 1mA, Cout = 100nF

8

en

330

nV/Hz

Rise time : 10% of CE to 90% of VregOUT

14–8

5.0

CONTROL AMPLIFIER SPECIFICATIONS

(For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 125°C unless otherwise noted)

Continuous current

12

ICONT

Peak current (sink and source)

12

IPEAK

Quiescent current entering pin 11 at 8V

Device is in ON state and no load on pin 12

12

IQON

1.0

µs

2.0

mA

10

mA

mA

Input bias current, V+ = V– = 2V

Open–loop voltage gain, TA = 25°C

Gain Bandwidth Product measured at 100kHz

Output voltage levels, Vnegreg=–5V

Level high : Isource = 1mA

Level low : Isink = 1mA

Input offset voltage

12

9–10

IIB

AVOL

GBW

VOH

VOL

600

nA

60

dB

5.5

MHz

V

7.75

0.25

10

mV

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