MC33170DTB Просмотр технического описания (PDF) - ON Semiconductor

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MC33170DTB

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

ON Semiconductor 

MC33170

180

135

Gain

90

Cout = 0

45

0

-45

Phase

-90

-135

-180

10000

100000

1000000

10000000

FREQUENCY (Hz)

MC33170 Bode plot

50

40

30

20

10

0

-10

-20

-30

-40

-50

100000000

Operational amplifier AC measurements with:

Vcc = 3.6V, Tx = CE = 1.0V, Vboost = 8V,

Pin 12 loaded not loaded

200

150

Gain

100

50

0

-50

Phase

-100

Cout = 1nF

-150

-200

10000

100000

1000000

10000000

FREQUENCY (Hz)

MC33170 Bode plot

50

40

30

20

10

0

-10

-20

-30

-40

-50

100000000

Operational amplifier AC measurements with:

Vcc = 3.6V, Tx = CE = 1.0V, Vboost = 8V,

Pin 12 loaded by 1nF

450

400

350

300

250

200

150

100

50

0

100

1000

10000

100000

FREQUENCY (Hz)

Spectral noise density at Iout = 1mA

LDO output noise measurement with:

Vcc = 3.6V, Tx = CE = 1.0V, Cout = 100nF, Iout = 1mA

Integrated noise:

20Hz – 200kHz = 100µVrms

20Hz – 1MHz = 170µVrms

1000000

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