MC33151DG Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MC33151DG

High Speed Dual MOSFET Drivers

ON Semiconductor 

MC34151, MC33151

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Supply Voltage

Logic Inputs (Note 1)

Drive Outputs (Note 2)

Totem Pole Sink or Source Current

Diode Clamp Current (Drive Output to VCC)

Power Dissipation and Thermal Characteristics

D Suffix SOIC−8 Package Case 751

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

P Suffix 8−Pin Package Case 626

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

Operating Junction Temperature

Operating Ambient Temperature

MC34151

MC33151

MC33151V

Storage Temperature Range

Electrostatic Discharge Sensitivity (ESD) (Note 3)

Human Body Model (HBM)

Machine Model (MM)

Charged Device Model (CDM)

VCC

Vin

IO

IO(clamp)

20

−0.3 to VCC

1.5

1.0

PD

RqJA

PD

RqJA

TJ

TA

Tstg

ESD

0.56

180

1.0

100

+150

0 to +70

−40 to +85

−40 to +125

−65 to +150

2000

200

1500

V

V

A

W

°C/W

W

°C/W

°C

°C

°C

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.

2. Maximum package power dissipation limits must be observed.

3. ESD protection per JEDEC Standard JESD22−A114−F for HBM

per JEDEC Standard JESD22−A115−A for MM

per JEDEC Standard JESD22−C101D for CDM.

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