MC100E256FN Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MC100E256FN

5V ECL 3-Bit 4:1 MuxLatch

ON Semiconductor 

MC10E256, MC100E256

100E SERIES PECL DC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V (Note 1.)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

IEE

Power Supply Current

69

83

69

83

79

96

mA

VOH

Output HIGH Voltage (Note 2.)

3975 4050 4120 3975 4050 4120 3975 4050 4120 mV

VOL

Output LOW Voltage (Note 2.)

3190 3295 3380 3190 3255 3380 3190 3260 3380 mV

VIH

Input HIGH Voltage

3835 4050 4120 3835 4120 4120 3835 4120 4120 mV

VIL

Input LOW Voltage

3190 3300 3525 3190 3525 3525 3190 3525 3525 mV

IIH

Input HIGH Current

150

150

150 µA

IIL

Input LOW Current

0.5 0.3

0.5 0.25

0.5 0.2

µA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.

2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.

100E SERIES NECL DC CHARACTERISTICS VCCx= 0.0 V; VEE= –5.0 V (Note 1.)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

IEE

Power Supply Current

69

83

69

83

79

96

mA

VOH

Output HIGH Voltage (Note 2.)

–1025 –950 –880 –1025 –950 –880 –1025 –950 –880 mV

VOL

Output LOW Voltage (Note 2.)

–1810 –1705 –1620 –1810 –1745 –1620 –1810 –1740 –1620 mV

VIH

Input HIGH Voltage

–1165 –950 –880 –1165 –880 –880 –1165 –880 –880 mV

VIL

Input LOW Voltage

–1810 –1700 –1475 –1810 –1475 –1475 –1810 –1475 –1475 mV

IIH

Input HIGH Current

150

150

150 µA

IIL

Input LOW Current

0.5 0.3

0.5 0.25

0.5 0.2

µA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.

2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.

AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= –5.0 V (Note 1.)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

fMAX

tPLH

tPHL

Maximum Toggle Frequency

Propagation Delay to Output

TBD

TBD

TBD

GHz

ps

D 400 600 900 400 600 900 400 600 900

SEL1 550 775 1050 550 775 1050 550 775 1050

SEL2 450 650 900 450 650 900 450 650 900

LEN 350 500 800 350 500 800 350 500 800

MR 350 600 825 350 600 825 350 600 825

ts

Setup Time

ps

D 400 275

400 275

400 275

SEL1 600 300

600 300

600 300

SEL2 500 250

500 250

500 250

th

Hold Time

ps

D 300 – 275

300 – 275

300 – 275

SEL1 100 – 300

100 – 300

100 – 300

SEL2 200 – 250

200 – 250

200 – 250

tRR

Reset Recovery Time

tPW

Minimum Pulse Width

700 600

700 600

700 600

ps

ps

MR 400

400

400

tSKEW

tJITTER

tr

tf

Within-Device Skew (Note 2.)

Cycle–to–Cycle Jitter

Rise/Fall Times

(20 - 80%)

50

50

50

ps

TBD

TBD

TBD

ps

ps

275 475 700 275 475 700 275 475 700

1. 10 Series: VEE can vary +0.46 V / –0.06 V.

100 Series: VEE can vary +0.46 V / –0.8 V.

2. Within-device skew is defined as identical transitions on similar paths through a device.

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