MC100EPT26 Просмотр технического описания (PDF) - ON Semiconductor
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MC100EPT26 Datasheet PDF : 9 Pages
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MC100EPT26
Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V; GND = 0.0 V (Note 4)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
fmax
Maximum Frequency (Figure 2)
275 350
275 350
275 350
MHz
tPLH,
tPHL
Propagation Delay to
Output Differential (Note 5)
1.2 1.5 2.0 1.2 1.5 2.0 1.3 1.7 2.2 ns
1.2 1.5 1.8 1.2 1.5 1.8 1.2 1.5 1.8
tSK+ +
tSK−−
tSKPP
Within Device Skew++
Within Device Skew− −
Device−to−Device Skew (Note 6)
15 60
20 85
100 500
15
60
20
85
100 500
20
85 ps
30
85
100 500
tJITTER
Random Clock Jitter (RMS) (Figure 2)
@ v 200 MHz
@ > 200 MHz
6 30
20 275
6
30
40 275
ps
6
30
170 275
VPP
Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV
tr
Output Rise/Fall Times
tf
(0.8V − 2.0V)
ps
Q, Q 330 600 950 330 600 950 330 650 950
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.
5. Reference (VCC = 3.3 V ± 5%; GND = 0 V)
6. Skews are measured between outputs under identical transitions.
3.0
12
VOL 0.5 V
VOH
2.0
8
JITTER
1.0
4
0.0
0
0
100
200
300
FREQUENCY (MHz)
Figure 2. Typical VOH / Jitter versus Frequency (255C)
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