MBRS130LT3 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MBRS130LT3

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS

ON Semiconductor 

MBRS130LT3

MAXIMUM RATINGS

Rating

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

TL = 120°C

TL = 110°C

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Symbol

VRRM

VRWM

VR

IF(AV)

IFSM

Value

30

1.0

2.0

40

Unit

V

A

A

Operating Junction Temperature

TJ

−65 to +125

°C

THERMAL CHARACTERISTICS

Rating

Thermal Resistance,

Junction−to−Lead

Symbol

YJL

Value

12

Unit

°C/W

Thermal Resistance,

Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper)

Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper)

RqJA

228.8

71.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 1.0 A, TJ = 25°C)

(iF = 2.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 100°C)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

VF

V

0.395

0.445

IR

mA

1.0

10

http://onsemi.com

2

Share Link: